A novel method for statistical process control of gate oxide and front-end cleans monitoring in a manufacturing environment

A novel approach to monitoring the integrity of front-end cleans and gate oxidation is presented. This approach utilizes difference statistics of the 10-, 50-, and 90-percentile values in the charge-to-breakdown (QBD) distributions. Difference statistics are utilized to achieve improvements in the s...

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Bibliographic Details
Published in2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 2000 (Cat. No.00CH37072) pp. 392 - 396
Main Authors Cosway, R.G., Pirastehfar, L.S., Root, R.P., Roche, T.S., Naujokaitis, J.R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Condition monitoring
Design for quality
Frequency
Manufacturing processes
Modems
Oxidation
Process control
Semiconductor device manufacture
Statistical distributions
Testing
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Summary:A novel approach to monitoring the integrity of front-end cleans and gate oxidation is presented. This approach utilizes difference statistics of the 10-, 50-, and 90-percentile values in the charge-to-breakdown (QBD) distributions. Difference statistics are utilized to achieve improvements in the signal-to-noise ratio of potential issues and to minimize the number of wafers used in the monitoring matrix. Implementation of the analyses in this statistical process control (SPC) methodology enables the origin of issues to be brought to the attention of sustaining personnel without the need for in-depth understanding of gate oxide integrity (GOI) testing, thus making it 100% applicable to a manufacturing environment.
ISBN:9780780359215
0780359216
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2000.902617