High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory

For the first time published, high endurance OTS (ovonic threshold switch, here, TeAsGeSiSe-based) is integrated with PCM (here, doped Ge2Sb2Te5) to form a 3D stackable pillar type device. With the help of an etch buffer layer and a damage-free pillar RIE process, we achieved 100% array yield withou...

Full description

Saved in:
Bibliographic Details
Published in2018 IEEE Symposium on VLSI Technology pp. 205 - 206
Main Authors Yeh, C. W., Chien, W. C., Bruce, R. L., Cheng, H. Y., Kuo, I. T., Yang, C. H., Ray, A., Miyazoe, H., Kim, W., Carta, F., Lai, E. K., BrightSky, M., Lung, H. L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Annealing
Buffer layers
Electrodes
Phase change materials
Thermal stability
Three-dimensional displays
Online AccessGet full text
ISSN2158-9682
DOI10.1109/VLSIT.2018.8510621

Cover

Abstract For the first time published, high endurance OTS (ovonic threshold switch, here, TeAsGeSiSe-based) is integrated with PCM (here, doped Ge2Sb2Te5) to form a 3D stackable pillar type device. With the help of an etch buffer layer and a damage-free pillar RIE process, we achieved 100% array yield without OTS/PCM composition modification. Anneal tests show this one-selector/one-resistor (1S1R) pillar device is BEOL-compatible.We report excellent electrical performance by 1S1R OTS-PCM device; selector provides the fast turn on/off speed which enables 10ns fast RESET speed, program endurance is 10 9 cycles, and read endurance is higher than 10 11 cycles.
AbstractList For the first time published, high endurance OTS (ovonic threshold switch, here, TeAsGeSiSe-based) is integrated with PCM (here, doped Ge2Sb2Te5) to form a 3D stackable pillar type device. With the help of an etch buffer layer and a damage-free pillar RIE process, we achieved 100% array yield without OTS/PCM composition modification. Anneal tests show this one-selector/one-resistor (1S1R) pillar device is BEOL-compatible.We report excellent electrical performance by 1S1R OTS-PCM device; selector provides the fast turn on/off speed which enables 10ns fast RESET speed, program endurance is 10 9 cycles, and read endurance is higher than 10 11 cycles.
Author Carta, F.
Bruce, R. L.
Chien, W. C.
Kuo, I. T.
Yeh, C. W.
Ray, A.
Lung, H. L.
Kim, W.
Yang, C. H.
Lai, E. K.
BrightSky, M.
Cheng, H. Y.
Miyazoe, H.
Author_xml – sequence: 1
  givenname: C. W.
  surname: Yeh
  fullname: Yeh, C. W.
  organization: Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan
– sequence: 2
  givenname: W. C.
  surname: Chien
  fullname: Chien, W. C.
  organization: Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan
– sequence: 3
  givenname: R. L.
  surname: Bruce
  fullname: Bruce, R. L.
  organization: IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA
– sequence: 4
  givenname: H. Y.
  surname: Cheng
  fullname: Cheng, H. Y.
  organization: Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan
– sequence: 5
  givenname: I. T.
  surname: Kuo
  fullname: Kuo, I. T.
  organization: Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan
– sequence: 6
  givenname: C. H.
  surname: Yang
  fullname: Yang, C. H.
  organization: Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan
– sequence: 7
  givenname: A.
  surname: Ray
  fullname: Ray, A.
  organization: IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA
– sequence: 8
  givenname: H.
  surname: Miyazoe
  fullname: Miyazoe, H.
  organization: IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA
– sequence: 9
  givenname: W.
  surname: Kim
  fullname: Kim, W.
  organization: IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA
– sequence: 10
  givenname: F.
  surname: Carta
  fullname: Carta, F.
  organization: IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA
– sequence: 11
  givenname: E. K.
  surname: Lai
  fullname: Lai, E. K.
  organization: Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan
– sequence: 12
  givenname: M.
  surname: BrightSky
  fullname: BrightSky, M.
  organization: IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA
– sequence: 13
  givenname: H. L.
  surname: Lung
  fullname: Lung, H. L.
  organization: Emerging Central Lab, Macronix International Co., Ltd., Hsinchu, Taiwan
BookMark eNotj8FKw0AURUdRsKn-gG7mBya-NzMZJ0uJbVNIaSHRbZkkLzU6TSSJi_69Bbu6cA4cuAG76fqOGHtECBEhfv7I8nURSkAb2gjBSLxiAUbKGi3Ryms2kxhZERsr71gwjl8AEs56xlZpe_jki67-HVxXEc_JNyIlN7XdgW-LXOySDd-13ruBJ-Q9b_qBqzeeT676dqUnvqFjP5zu2W3j_EgPl52z9-WiSFKRbVfr5DUTrdQ4CZKgFOiKqriRABp0qY3V5swip3VTv4Cuy4icc8qgNgiutgol1LpSDYCas6f_bktE-5-hPbrhtL-cVn8hkEpH
ContentType Conference Proceeding
DBID 6IE
6IH
CBEJK
RIE
RIO
DOI 10.1109/VLSIT.2018.8510621
DatabaseName IEEE Electronic Library (IEL) Conference Proceedings
IEEE Proceedings Order Plan (POP) 1998-present by volume
IEEE Xplore All Conference Proceedings
IEEE Electronic Library (IEL)
IEEE Proceedings Order Plans (POP) 1998-present
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE/IET Electronic Library
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISBN 1538642182
9781538642184
EISSN 2158-9682
EndPage 206
ExternalDocumentID 8510621
Genre orig-research
GroupedDBID 29G
6IE
6IH
6IL
6IN
AAWTH
ABLEC
ADZIZ
AI.
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CBEJK
CHZPO
IEGSK
IJVOP
OCL
RIE
RIL
RIO
RNS
VH1
ID FETCH-LOGICAL-i241t-e203304cec9f200404b468463045a44fd704db5eaaa3614610ad83120d4c3f003
IEDL.DBID RIE
IngestDate Wed Aug 27 02:52:38 EDT 2025
IsPeerReviewed false
IsScholarly true
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-i241t-e203304cec9f200404b468463045a44fd704db5eaaa3614610ad83120d4c3f003
PageCount 2
ParticipantIDs ieee_primary_8510621
PublicationCentury 2000
PublicationDate 2018-06
PublicationDateYYYYMMDD 2018-06-01
PublicationDate_xml – month: 06
  year: 2018
  text: 2018-06
PublicationDecade 2010
PublicationTitle 2018 IEEE Symposium on VLSI Technology
PublicationTitleAbbrev VLSIT
PublicationYear 2018
Publisher IEEE
Publisher_xml – name: IEEE
SSID ssj0020538
ssj0002685526
Score 2.193732
Snippet For the first time published, high endurance OTS (ovonic threshold switch, here, TeAsGeSiSe-based) is integrated with PCM (here, doped Ge2Sb2Te5) to form a 3D...
SourceID ieee
SourceType Publisher
StartPage 205
SubjectTerms Annealing
Buffer layers
Electrodes
Phase change materials
Thermal stability
Three-dimensional displays
Title High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory
URI https://ieeexplore.ieee.org/document/8510621
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8JAEN4gJ734AOM7e_DolqXdvs4IorFKAhhuZrudGgMphrQH_fXOtAUf8eCt6aHZ7KPfN7PfN8PYZaARFj0nFU4cOEJ1E_wPhqkREAJG2G6MmEtu5OjBG07V3cydNdjVxgsDAKX4DCx6LO_yk6UpKFXWQXYgPXKNb-E2q7xam3yK7QWuS1SiDrZwcwVrk4wMO0_349sJKbkCq_7Kj3YqJZoMdlm0HkclIplbRR5b5uNXicb_DnSPtb98e3y0QaR91oDsgO18KznYYjck7OD9LCmoowbwMSxSMSTimL3wx8lYjHoRH1ErohXvwWLBkdRy55ojKTVzslnxiLS57202HfQnvaGomymIVwTpXIAtKXVhwIQpnQypYuUh-aCbUq1UmvhSJbELWmvHo2bfUieB07VlooyT4tk_ZM1smcER413XhxR5BLg2qMCEGoMgo0PbB18C4t0xa9GUPL9V9TKe69k4-fv1KdumZankV2esma8KOEegz-OLcoU_ASiXozc
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV09T8MwELUqGICFjxbxjQdGnLqJkyZzaUmhKZWaom6V41wQapWiKhng1-NL0vIhBrYoQ2TZsd-783t3hNy4UsOiYyXMilyLiVasz0EvUQw80BG2HWnMRTdyMHT8iXiY2tMaud14YQCgEJ-BgY_FXX68VDmmypqaHXAHXePbGveFXbq1NhkV03FtG8lEFW7p38td22S413wejPsharlco_rOj4YqBZ709kmwHkkpI5kbeRYZ6uNXkcb_DvWANL6ce3S0waRDUoP0iOx9KzpYJ_co7aDdNM6xpwbQMSwS5iN1TF_oUzhmo05AR9iMaEU7sFhQTWupdUc1LVVzNFrRANW57w0y6XXDjs-qdgrsVcN0xsDkmLxQoLwE9wYXkXA0_cC7UilEEre5iCMbpJSWg-2-uYxdq2XyWCgr0bv_mGylyxROCG3ZbUg0kwDbBOEqT-owSEnPbEObg0a8U1LHKZm9lRUzZtVsnP39-prs-GEwmA36w8dzsotLVIqxLshWtsrhUsN-Fl0Vq_0J6tCmhA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=2018+IEEE+Symposium+on+VLSI+Technology&rft.atitle=High+Endurance+Self-Heating+OTS-PCM+Pillar+Cell+for+3D+Stackable+Memory&rft.au=Yeh%2C+C.+W.&rft.au=Chien%2C+W.+C.&rft.au=Bruce%2C+R.+L.&rft.au=Cheng%2C+H.+Y.&rft.date=2018-06-01&rft.pub=IEEE&rft.eissn=2158-9682&rft.spage=205&rft.epage=206&rft_id=info:doi/10.1109%2FVLSIT.2018.8510621&rft.externalDocID=8510621