Theoretical approach and precise description of PBTI in high-k gate dielectrics based on electron trap in pre-existing and stress-induced defects

• Published in: 2009 IEEE International Reliability Physics Symposium pp. 973 - 976
• Main Authors: Shimokawa, J., Sato, M., Suzuki, C., Nakamura, M., Ohji, Y.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.01.2009
• Subjects: Chemical analysis; de-trap; Degradation; Electron traps; Electronic mail; High K dielectric materials; high-k; High-K gate dielectrics; Lead compounds; Leakage current; modeling; NBTI; Niobium compounds; PBTI; pre-existing defects; stress-induced defects; Titanium compounds; trap

We have theoretically analyzed the mechanism of PBTI degradation of high-k gate dielectrics. We proposed a PBTI degradation model based on a comprehensive physical theory using the general notation of gate leakage current and adequate trap distribution. Furthermore, by taking account not only pre-ex...