Theoretical approach and precise description of PBTI in high-k gate dielectrics based on electron trap in pre-existing and stress-induced defects

We have theoretically analyzed the mechanism of PBTI degradation of high-k gate dielectrics. We proposed a PBTI degradation model based on a comprehensive physical theory using the general notation of gate leakage current and adequate trap distribution. Furthermore, by taking account not only pre-ex...

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Bibliographic Details
Published in2009 IEEE International Reliability Physics Symposium pp. 973 - 976
Main Authors Shimokawa, J., Sato, M., Suzuki, C., Nakamura, M., Ohji, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2009
Subjects
Chemical analysis
de-trap
Degradation
Electron traps
Electronic mail
High K dielectric materials
high-k
High-K gate dielectrics
Lead compounds
Leakage current
modeling
NBTI
Niobium compounds
PBTI
pre-existing defects
stress-induced defects
Titanium compounds
trap
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Summary:We have theoretically analyzed the mechanism of PBTI degradation of high-k gate dielectrics. We proposed a PBTI degradation model based on a comprehensive physical theory using the general notation of gate leakage current and adequate trap distribution. Furthermore, by taking account not only pre-existing but also stress-induced defects, our model could explain the experimental data with high accuracy even though it was very simple. In addition, we have clarified that defect generation rate and/or capture cross-section in HfSiON is different from that in HfLaSiON.
ISBN:9781424428885
1424428882
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2009.5173393