Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?

Serious flaws in conventional understanding related to current filamentation and failure in ggNMOS is addressed. The conventional theory is revisited with new physical insights toward current filamentation. Filament dynamics under electrical and thermal instabilities is discussed while correlating i...

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Bibliographic Details
Published in2017 30th International Conference on VLSI Design and 2017 16th International Conference on Embedded Systems (VLSID) pp. 391 - 394
Main Authors Paul, Milova, Russ, Christian, Kumar, B. Sampath, Gossner, Harald, Shrivastava, Mayank
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2017
Subjects
Doping
electrical and thermal instability
Electrostatic Discharge (ESD)
Electrostatic discharges
filamentation
ggNMOS
Resistance
silicide blocking
Silicides
Solid modeling
Three-dimensional displays
Two dimensional displays
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Summary:Serious flaws in conventional understanding related to current filamentation and failure in ggNMOS is addressed. The conventional theory is revisited with new physical insights toward current filamentation. Filament dynamics under electrical and thermal instabilities is discussed while correlating it with stress time and current, silicide blocking and S/D doping.
ISSN:2380-6923
DOI:10.1109/VLSID.2017.32