High-Density and Fault-Tolerant Cu Atom Switch Technology Toward 28nm-node Nonvolatile Programmable Logic

Key device/circuit technologies for realizing a 28nm-node atom switch programmable logic (AS-PL) have been developed. An advanced polymer solid-electrolyte (PSE) reduces set voltage down to 1.6 V while ensuring ON-state and OFF-state reliabilities under current and voltage stress at 125°C. A fine-gr...

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Bibliographic Details
Published in2018 IEEE Symposium on VLSI Technology pp. 127 - 128
Main Authors Nebashi, R., Banno, N., Miyamura, M., Tsuji, Y., Morioka, A., Bai, X., Okamoto, K., Iguchi, N., Numata, H., Hada, H., Sugibayashi, T., Sakamoto, T., Tada, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Delays
Redundancy
Routing
Stress
Switches
Switching circuits
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Summary:Key device/circuit technologies for realizing a 28nm-node atom switch programmable logic (AS-PL) have been developed. An advanced polymer solid-electrolyte (PSE) reduces set voltage down to 1.6 V while ensuring ON-state and OFF-state reliabilities under current and voltage stress at 125°C. A fine-grain redundancy in a cross-bar array also contributes to reduce supply voltage by 6%. A routing-based wear leveling improves programming cycles by nine times. The developed technologies allow us to design the 28nm-node AS-PL with a 32% higher performance and 11% lower power.
ISSN:2158-9682
DOI:10.1109/VLSIT.2018.8510703