Enhanced shielded-gate trench MOSFETs for high-frequency, high-efficiency computing power supply applications

Shielded-gate trench-MOSFETs yield superior performance compared to conventional gate trench devices by allowing higher doping density in the drift region and providing a `shielding effect' for the gate by placing an intermediate electrode between gate and drain. However, further design optimiz...

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Bibliographic Details
Published in2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) pp. 507 - 511
Main Authors Sarkar, T., Challa, A., Sapp, Steven
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2013
Subjects
Electrodes
Logic gates
MOSFET
Performance evaluation
Resistance
Substrates
Threshold voltage
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Summary:Shielded-gate trench-MOSFETs yield superior performance compared to conventional gate trench devices by allowing higher doping density in the drift region and providing a `shielding effect' for the gate by placing an intermediate electrode between gate and drain. However, further design optimizations can be done for a shielded-gate trench-MOSFET to improve performance parameters particularly suited for next-generation high-frequency computing power supply applications and they have been outlined in this article. Channel length and threshold voltage optimization, substrate thinning and intrinsic gate resistance reduction (by layout enhancements) have been discussed along with their impact on device footprint reduction. Further, effects of these design optimizations on the power loss and efficiency of a high-frequency switching converter have been demonstrated through experimental characterizations.
ISBN:1467343544
9781467343541
ISSN:1048-2334
2470-6647
DOI:10.1109/APEC.2013.6520257