Design of integrated capacitive modulators for 56Gbps operation

We present TCAD simulation results for the integration of capacitive modulators in a 300mm SOI platform. We show that tuning the capacitor oxide thickness improves the bandwidth and the component efficiency, leading to 860μm active length, 56Gbps data rate and low power consumption (1.2Vpp).

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Bibliographic Details
Published in2016 IEEE 13th International Conference on Group IV Photonics (GFP) pp. 5 - 7
Main Authors Douix, Maurin, Marris-Morini, Delphine, Baudot, Charles, Cremer, Sebastien, Rideau, Denis, Perez-Galacho, Diego, Souhaite, Aurelie, Blanc, Romuald, Batail, Estelle, Vulliet, Nathalie, Vivien, Laurent, Cassan, Eric, Boeuf, Frederic
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2016
Subjects
Bandwidth
capacitive modulator
Capacitors
Doping
Insertion loss
Modulation
Photonics
poly-Si
Power demand
TCAD
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Summary:We present TCAD simulation results for the integration of capacitive modulators in a 300mm SOI platform. We show that tuning the capacitor oxide thickness improves the bandwidth and the component efficiency, leading to 860μm active length, 56Gbps data rate and low power consumption (1.2Vpp).
DOI:10.1109/GROUP4.2016.7739103