High-power K-band GaN PA MMICs and module for NPR and PAE

Two K-Band GaN MMICs and an SSPA module that display high-power and linearity are presented. The two MMICs utilize a 0.2pm gate GaN HEMT technology and are designed for 17.2 to 20.2 GHz at a 20V bias. The first design, APN269, shows over 10W of output power at 38% PAE at P sat and 15dB NPR at P2dB....

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Bibliographic Details
Published in2017 IEEE MTT-S International Microwave Symposium (IMS) pp. 1838 - 1841
Main Authors Din, Salah, Morishita, Andy M., Yamamoto, Neal, Brown, Chris, Wojtowicz, Mike, Siddiqui, Mansoor
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2017
Subjects
Gain
Gallium nitride
gallium nitride (GaN)
Linearity
Logic gates
MMIC
MMICs
noise power ratio (NPR)
PAE
power amplifier
Power amplifiers
Power generation
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Summary:Two K-Band GaN MMICs and an SSPA module that display high-power and linearity are presented. The two MMICs utilize a 0.2pm gate GaN HEMT technology and are designed for 17.2 to 20.2 GHz at a 20V bias. The first design, APN269, shows over 10W of output power at 38% PAE at P sat and 15dB NPR at P2dB. The second design, APN272, shows 8.5W of output power at 46% PAE at P sat and over 18dB NPR. Finally, the module displays 30W and over 22% PAE at P sat with 15dB NPR at P2dB. These results showcase optimizing for power and PAE while maintaining high-linearity.
DOI:10.1109/MWSYM.2017.8059010