Measuring threshold voltage variability of 10G transistors

Threshold voltage (V TH ) variability of 10G (10 billion) transistors is measured using a special device-matrix-array test-element-group (DMA TEG) exclusively for ultra-fast V TH measurements. It is found that V TH variability in nFETs almost follows the normal distribution up to ±6σ, while pFETs ha...

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Bibliographic Details
Published in2011 International Electron Devices Meeting pp. 25.2.1 - 25.2.4
Main Authors Mizutani, T., Kumar, A., Hiramoto, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Current measurement
Gaussian distribution
Semiconductor device measurement
Three dimensional displays
Transistors
Very large scale integration
Voltage measurement
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Summary:Threshold voltage (V TH ) variability of 10G (10 billion) transistors is measured using a special device-matrix-array test-element-group (DMA TEG) exclusively for ultra-fast V TH measurements. It is found that V TH variability in nFETs almost follows the normal distribution up to ±6σ, while pFETs have a clear "tail" in low V TH region. The origin of the non-normal distribution is analyzed by measuring transistors fabricated in two different fabs and by 3D device simulation.
ISBN:1457705060
9781457705069
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131610