Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition

The hysteresis of the capacitance-voltage (C-V) characteristics of an Al 2 O 3 /n-GaN metal-insulator-semiconductor structure was evaluated under light (white LED)-irradiation and dark conditions. The hysteresis was not observed under the dark condition but was observed under the light-irradiation c...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 38; no. 9; pp. 1309 - 1312
Main Authors Teramoto, Akinobu, Saito, Masaya, Suwa, Tomoyuki, Narita, Tetsuo, Kuroda, Rihito, Sugawa, Shigetoshi
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2017
Subjects
Aluminum oxide
Gallium nitride
high-k gate dielectrics
hole
Hysteresis
interface states
Light emitting diodes
Logic gates
MOSFET
Radiation effects
Online AccessGet full text

Cover

More Information
Summary:The hysteresis of the capacitance-voltage (C-V) characteristics of an Al 2 O 3 /n-GaN metal-insulator-semiconductor structure was evaluated under light (white LED)-irradiation and dark conditions. The hysteresis was not observed under the dark condition but was observed under the light-irradiation condition. The GaN surface was completely depleted in negative bias under the dark condition. The C-V characteristics indicated that the hysteresis is caused by hole trapping under the LED irradiation condition and that the holes are generated in the n-GaN surface by LED irradiation and subsequently injected into the Al 2 O 3 films. When the holes are generated in the depletion region of GaN for any reason, such as a short generation lifetime, they can be trapped in the Al 2 O 3 films.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2734914