A Method of Fabricating Bump-Less Interconnects Applicable to Wafer-Scale Flip-Chip Bonding

A chemical flip-chip bonding method by electroless plating process has been developed. This method positively utilizes so-called "bridge" phenomenon between metal pads in electroless Ni-B plating, and enables bump-less interconnect without loading and/or heating at lower temperature (60°C)...

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Bibliographic Details
Published in2008 10th Electronics Packaging Technology Conference pp. 657 - 662
Main Authors Yamaji, Y., Yokoshima, T., Igawa, N., Kikuchi, K., Nakagawa, H., Aoyagi, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2008
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Summary:A chemical flip-chip bonding method by electroless plating process has been developed. This method positively utilizes so-called "bridge" phenomenon between metal pads in electroless Ni-B plating, and enables bump-less interconnect without loading and/or heating at lower temperature (60°C). The interconnect behavior was examined using test chips and substrates with various pad-to-pad configurations. The result confirmed that effective pad width and a ratio of pad pitch to pad width determine the completeness of the interconnection under the condition that distance between facing pads are sufficiently close. A potential of improved method was also demonstrated for fabricating finer pitch flip-chip interconnect with a minimum pad-pitch of 20 ¿m.
ISBN:9781424421176
1424421179
DOI:10.1109/EPTC.2008.4763508