A Method of Fabricating Bump-Less Interconnects Applicable to Wafer-Scale Flip-Chip Bonding
A chemical flip-chip bonding method by electroless plating process has been developed. This method positively utilizes so-called "bridge" phenomenon between metal pads in electroless Ni-B plating, and enables bump-less interconnect without loading and/or heating at lower temperature (60°C)...
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Published in | 2008 10th Electronics Packaging Technology Conference pp. 657 - 662 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.12.2008
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Subjects | |
Online Access | Get full text |
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Summary: | A chemical flip-chip bonding method by electroless plating process has been developed. This method positively utilizes so-called "bridge" phenomenon between metal pads in electroless Ni-B plating, and enables bump-less interconnect without loading and/or heating at lower temperature (60°C). The interconnect behavior was examined using test chips and substrates with various pad-to-pad configurations. The result confirmed that effective pad width and a ratio of pad pitch to pad width determine the completeness of the interconnection under the condition that distance between facing pads are sufficiently close. A potential of improved method was also demonstrated for fabricating finer pitch flip-chip interconnect with a minimum pad-pitch of 20 ¿m. |
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ISBN: | 9781424421176 1424421179 |
DOI: | 10.1109/EPTC.2008.4763508 |