High power and high efficiency Ka band power amplifier

A 36 W Ka-band MMIC power amplifier using 0.2 um gate GaN HEMT technology is presented. The power was measured across 27 to 30 GHz with a minimum 30% PAE. A peak power of 40 W at 27 GHz was demonstrated. The MMIC area is a compact 13.5 mm^2 and uses 10.67 mm device periphery in the output stage. Thi...

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Bibliographic Details
Published in2015 IEEE MTT-S International Microwave Symposium pp. 1 - 4
Main Authors Din, Salah, Wojtowicz, Mike, Siddiqui, Mansoor
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Area measurement
Gallium arsenide
Gallium nitride
HEMTs
Logic gates
MMIC
PAE
Performance evaluation
Power amplifiers
Power Density
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Summary:A 36 W Ka-band MMIC power amplifier using 0.2 um gate GaN HEMT technology is presented. The power was measured across 27 to 30 GHz with a minimum 30% PAE. A peak power of 40 W at 27 GHz was demonstrated. The MMIC area is a compact 13.5 mm^2 and uses 10.67 mm device periphery in the output stage. This demonstration is a significant improvement in performance over current Ka-band MMIC amplifiers.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2015.7166776