Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes

For stability against the thermal budget of the CMOS BEOL process, we developed a new solid-electrolyte switch that uses a SiO 2 -Ta 2 O 5 composite as the electrolyte. This switch has high thermal stability because thermal diffusion of Cu + ions is suppressed in the composite. Moreover, its switchi...

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Bibliographic Details
Published in2009 IEEE International Reliability Physics Symposium pp. 395 - 399
Main Authors Banno, N., Sakamoto, T., Hada, H., Kasai, N., Iguchi, N., Imai, H., Fujieda, S., Ichihashi, T., Hasegawa, T., Aono, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2009
Subjects
Annealing
BEOL process
Copper
Electrodes
Field programmable gate arrays
Logic
nonvolatile switch
Solids
Switches
Thermal stability
Thermal stresses
Voltage
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Summary:For stability against the thermal budget of the CMOS BEOL process, we developed a new solid-electrolyte switch that uses a SiO 2 -Ta 2 O 5 composite as the electrolyte. This switch has high thermal stability because thermal diffusion of Cu + ions is suppressed in the composite. Moreover, its switching characteristics after thermal annealing are similar to those of a Ta 2 O 5 switch without annealing. The switch with the SiO 2 -Ta 2 O 5 composite electrolyte has good ON-state durability against DC current stress; its durability is comparable to that of a single via in interconnects. The switch can be implemented in the local interconnection layers of LSIs.
ISBN:9781424428885
1424428882
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2009.5173285