Highly uniform AlGaN/GaN power HEMT on a 3-inch conductive N-SiC substrate for wireless base station application

Highly uniform AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost 3-inch conductive n-SiC substrate for the first time. Average values of threshold voltage (Vth) and transconductance (gm) of AlGaN/GaN HEMT were -1.55V and 194 mS/mm. Standard variations of those values...

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Bibliographic Details
Published inIEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05 p. 4 pp.
Main Authors Kikkawa, T., Imanishi, K., Kanamura, M., Joshin, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Aluminum gallium nitride
Base stations
Gain
Gallium nitride
HEMTs
Mass production
MODFETs
Power generation
Threshold voltage
Transconductance
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Summary:Highly uniform AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost 3-inch conductive n-SiC substrate for the first time. Average values of threshold voltage (Vth) and transconductance (gm) of AlGaN/GaN HEMT were -1.55V and 194 mS/mm. Standard variations of those values were only 0.15V and 3.9mS/mm across an entire 3-inch conductive substrate. The 1-mm-gate-periphery GaN HEMT chip, which was operated at 60V, achieved high CW output power density of 7.0W/mm, with a high linear gain of 22.2dB and power added efficiency (PAE) of 70% at 2.14GHz. Standard variations of power density, linear gain and PAE at 50V were only 0.42W/mm, 0.2dB and 3.0 point, respectively. This low-cost highly uniform high-gain chip technology is sufficient for mass production of wireless base station application using GaN-HEMTs.
ISBN:0780392507
9780780392502
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2005.1531765