New electrical testing structures and analysis method for MOL and BEOL process diagnostics and TDDB reliability assessment

Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables present in the data due to the involvement of many process steps such as lithography, etch, CMP, cleaning, and thin film deposition. With the continuing aggressive scaling of dev...

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Bibliographic Details
Published in2013 IEEE International Reliability Physics Symposium (IRPS) pp. PI.1.1 - PI.1.5
Main Authors Fen Chen, Mittl, S., Shinosky, M., Dufresne, R., Aitken, J., Yanfeng Wang, Kolvenback, K., Henson, W. K., Mocuta, D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2013
Subjects
Dielectric breakdown
Equations
Logic gates
low-k reliability
low-k TDDB
MOL reliability
Optical variables measurement
PC-CA reliabiltiy
PC-CA TDDB
Pollution measurement
Reliability
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Summary:Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables present in the data due to the involvement of many process steps such as lithography, etch, CMP, cleaning, and thin film deposition. With the continuing aggressive scaling of device dimensions and introduction of new device configurations, how to accurately analyze such complicated lateral dielectric breakdown data from MOL and BEOL TDDB in advanced VLSI circuits has become very challenging. In this paper, a new electrical method is developed to accurately characterize different variables in MOL and BEOL dielectric breakdown. This method provides a powerful way to do a fast deep dive process and reliability analysis for technology development and qualification without time consuming physical failure analysis.
ISBN:9781479901128
1479901121
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2013.6532104