A Total Bandwidth Expanded Dual-Band GaN Doherty PA toward the LTE-A Carrier Aggregation Application

This paper presents a new theoretical concept, design implementation and experimental results of a compact dual-band GaN-HEMT Doherty power amplifier (DPA) with broad bandwidths. Measured results well agree with simulation. Small signal 3 dB bandwidths at 700 MHz band and 2.1 GHz band are 300MHz and...

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Bibliographic Details
Published in2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 4
Main Authors Hayakawa, Makoto, Shiikuma, Kazumi, Kaneko, Tomoya
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2013
Subjects
Bandwidth
Dual band
Frequency measurement
Gain
Impedance
Power amplifiers
Power generation
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Summary:This paper presents a new theoretical concept, design implementation and experimental results of a compact dual-band GaN-HEMT Doherty power amplifier (DPA) with broad bandwidths. Measured results well agree with simulation. Small signal 3 dB bandwidths at 700 MHz band and 2.1 GHz band are 300MHz and 450 MHz, respectively. Total bandwidth of 750 MHz which covers the IM3 bandwidth of LTE-A signal is achieved. Drain efficiency at 6 dB back off exceeds 43% over 100 MHz bandwidths at both bands. The fabricated dual-band DPA is 135 × 65 mm 2 .
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2013.6659208