Local-property analysis for modeling of gate insulator materials

• Published in: 2006 International Workshop on Nano CMOS pp. 209 - 235
• Main Authors: Kentaro Doi, Nakamura, K., Tachibana, A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.01.2006
• Subjects: Amorphous materials; Density functional theory; Dielectric breakdown; Dielectric materials; Dielectric property; Dielectrics and electrical insulation; Hafnium oxide; IWNC; La oxide; Nano CMOS; Nanoscale devices; Nanostructured materials; Regional density functional theory; Reliability; Reliability theory; Rigged QED theory; Zirconium
• ISBN: 142440603X; 9781424406036
• DOI: 10.1109/IWNC.2006.4570993

We have constructed fundamental theories for electronic properties and dielectric breakdown of gate insulator materials in nano-CMOS devices based on the Rigged QED theory and the regional density functional theory. Simulations about dielectric properties and reliability due to these theories have been carried out for SiO 2 , ZrO 2 , HfO 2 , Zr x Si 1-x O 2 , Hf x Si 1-x O 2 , Gd x O y , La x O y , and SiO x N y through the modeling of nano-CMOS system such as crystal and amorphous thin films. Furthermore, we have reported development of the nucleus-electron multiple dynamics program codes following the Rigged QED theory.