Local-property analysis for modeling of gate insulator materials
We have constructed fundamental theories for electronic properties and dielectric breakdown of gate insulator materials in nano-CMOS devices based on the Rigged QED theory and the regional density functional theory. Simulations about dielectric properties and reliability due to these theories have b...
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Published in | 2006 International Workshop on Nano CMOS pp. 209 - 235 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.01.2006
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Subjects | |
Online Access | Get full text |
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Summary: | We have constructed fundamental theories for electronic properties and dielectric breakdown of gate insulator materials in nano-CMOS devices based on the Rigged QED theory and the regional density functional theory. Simulations about dielectric properties and reliability due to these theories have been carried out for SiO 2 , ZrO 2 , HfO 2 , Zr x Si 1-x O 2 , Hf x Si 1-x O 2 , Gd x O y , La x O y , and SiO x N y through the modeling of nano-CMOS system such as crystal and amorphous thin films. Furthermore, we have reported development of the nucleus-electron multiple dynamics program codes following the Rigged QED theory. |
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ISBN: | 142440603X 9781424406036 |
DOI: | 10.1109/IWNC.2006.4570993 |