Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

• Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 59 - 62
• Main Authors: Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2019
• Subjects: Absorption; avalanche breakdown; Electric fields; Franz-Keldysh effect; Gallium nitride; GaN; Impact ionization; impact ionization coefficient; p-n junction diode; P-n junctions; Photoconductivity; Semiconductor device measurement

A valanche multiplication characteristics in GaN p-n junction diodes (PNDs) under high reverse bias conditions were investigated. The GaN-on-GaN PNDs with double-side-depleted shallow bevel termination, which showed low reverse leakage current and excellent avalanche capability, were used for the me...