Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect
A valanche multiplication characteristics in GaN p-n junction diodes (PNDs) under high reverse bias conditions were investigated. The GaN-on-GaN PNDs with double-side-depleted shallow bevel termination, which showed low reverse leakage current and excellent avalanche capability, were used for the me...
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Published in | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 59 - 62 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2019
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Subjects | |
Online Access | Get full text |
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