Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

A valanche multiplication characteristics in GaN p-n junction diodes (PNDs) under high reverse bias conditions were investigated. The GaN-on-GaN PNDs with double-side-depleted shallow bevel termination, which showed low reverse leakage current and excellent avalanche capability, were used for the me...

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Published in2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 59 - 62
Main Authors Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2019
Subjects
Absorption
avalanche breakdown
Electric fields
Franz-Keldysh effect
Gallium nitride
GaN
Impact ionization
impact ionization coefficient
p-n junction diode
P-n junctions
Photoconductivity
Semiconductor device measurement
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Summary:A valanche multiplication characteristics in GaN p-n junction diodes (PNDs) under high reverse bias conditions were investigated. The GaN-on-GaN PNDs with double-side-depleted shallow bevel termination, which showed low reverse leakage current and excellent avalanche capability, were used for the measurements. Under sub-bandgap light illumination, the photocurrents induced by Franz-Keldysh (FK) effect, which can be well reproduced by the theoretical calculations of the optical absorption, and their avalanche multiplications were observed. The multiplication factors were extracted as the ratios of the experimental photocurrents to the calculated FK-induced photocurrent. Under an assumption of equal impact ionization coefficients of electrons and holes, the electric-field dependence of an impact ionization coefficient in GaN were estimated.
ISBN:1728105803
9781728105802
ISSN:1946-0201
DOI:10.1109/ISPSD.2019.8757676