Characterization of micro-bump C4 interconnects for Si-carrier SOP applications

This paper describes yield, contact resistance, and preliminary reliability test results on micro-bump C4 interconnects in modules containing Si-chips and Si-carriers. Modules containing eutectic PbSn or SnCu bump solders were fabricated with high yield, with similar interconnect contact resistances...

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Bibliographic Details
Published in56th Electronic Components and Technology Conference 2006 p. 8 pp.
Main Authors Wright, S.L., Polastre, R., Gan, H., Buchwalter, L.P., Horton, R., Andry, P.S., Sprogis, E., Patel, C., Tsang, C., Knickerbocker, J., Lloyd, J.R., Sharma, A., Sri-Jayantha, M.S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Ceramics
Contact resistance
Gallium nitride
Packaging
Power system interconnection
Resists
Rivers
Silicon
System testing
Wiring
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ISBN1424401526
9781424401529
ISSN0569-5503
DOI10.1109/ECTC.2006.1645716

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Summary:This paper describes yield, contact resistance, and preliminary reliability test results on micro-bump C4 interconnects in modules containing Si-chips and Si-carriers. Modules containing eutectic PbSn or SnCu bump solders were fabricated with high yield, with similar interconnect contact resistances for both solders. The contact resistance and reliability test results to date suggest that reliable, high-current, high-density bump interconnections can be achieved for Si-carrier technology
ISBN:1424401526
9781424401529
ISSN:0569-5503
DOI:10.1109/ECTC.2006.1645716