Development of Through Glass Via (TGV) formation technology using electrical discharging for 2.5/3D integrated packaging

This study explored Through Glass Via (TGV) Formation Technology by using Focused Electrical Discharging Method for alkali-fee glass which has well matched CTE with Si. 2.5D/3D Packaging has presently attracted lots of attention, an interposer is recognized as one of key materials, and its developme...

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Bibliographic Details
Published in2013 IEEE 63rd Electronic Components and Technology Conference pp. 348 - 352
Main Authors Takahashi, Shintaro, Horiuchi, Kohei, Tatsukoshi, Kentaro, Ono, Motoshi, Imajo, Nobuhiko, Mobely, Tim
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2013
Subjects
Glass
Packaging
Shape
Silicon
Substrates
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ISBN9781479902330
1479902330
ISSN0569-5503
DOI10.1109/ECTC.2013.6575594

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Summary:This study explored Through Glass Via (TGV) Formation Technology by using Focused Electrical Discharging Method for alkali-fee glass which has well matched CTE with Si. 2.5D/3D Packaging has presently attracted lots of attention, an interposer is recognized as one of key materials, and its development of new fine pitch, high dense, and low cost interposer are accelerated. Glass is expected as one of candidates as a substrate material of future interposer substrate. This study demonstrates TGV formation showed capabilities of fine pitch and high dense, and TGV formation for standard thick glass aiming varied applications for packaging such as MEMS, Optical device, and RF device. This study discussed further challenges related to metalization technique and carrying methods for glass interposer. Necessary future development and subjects were pointed out.
ISBN:9781479902330
1479902330
ISSN:0569-5503
DOI:10.1109/ECTC.2013.6575594