The influence of doping power on the properties of Al-doped SnO2 films deposited by reactive magnetron co-sputtering

Al-doped SnO 2 films were deposited by reactive magnetron co-sputtering on Si (100) and glass substrates using Al and SnO 2 target. The structure, surface morphology, electrical, optical and photoluminescent properties of films were investigated. With the increase of doping power, the shift of peaks...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 180; no. 1; pp. 149 - 159
Main Authors Zhang, Wen-Wen, Ren, Xiao-Guang, Gu, Guang-Rui, Wu, Bao-Jia
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 04.05.2017
Taylor & Francis Ltd
Subjects
Aluminum
Doping
doping power
Glass substrates
Lattice vacancies
Magnetic properties
Magnetron sputtering
Optical properties
Photoluminescence
photoluminescence property
Silicon substrates
Thin films
Tin dioxide
XRD
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Summary:Al-doped SnO 2 films were deposited by reactive magnetron co-sputtering on Si (100) and glass substrates using Al and SnO 2 target. The structure, surface morphology, electrical, optical and photoluminescent properties of films were investigated. With the increase of doping power, the shift of peaks was observed in XRD spectrum, indicating that Al atoms have been incorporated into SnO 2 lattice successfully. Meanwhile, the grain size of the Al-doped SnO 2 thin film is much smaller than that of the un-doped SnO 2 thin film. The average transmittance of the films decreases from 83% to 75% as the doping power increases from 0 W to 60 W. Moreover, the intensity of the photoluminescence gets weaker due to the decrease of oxygen vacancy.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2017.1340697