Etching mechanism of LiTaO3 crystals in CHF3/Ar plasma

CHF 3 /Ar plasma was used to etch LiTaO 3 crystal by inductively coupled plasmas technique. X-ray photoelectron spectroscopy was performed to investigate the etching mechanism. It was found that chemical reactions had occurred between the F plasma and the Li and Ta metal species, forming the corresp...

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Bibliographic Details
Published inFerroelectrics Vol. 582; no. 1; pp. 28 - 35
Main Authors Zhong, Z. Q., Cao, M. C., Luo, W. B., Li, M. R., Dai, L. P., Wang, S. Y.
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 22.10.2021
Taylor & Francis Ltd
Subjects
Argon plasma
Chemical reactions
Crystals
Etching
etching mechanism
Fluorides
Inductively coupled plasma
LiTaO
Metal fluorides
Photoelectrons
Plasma etching
Plasmas (physics)
X-ray photoelectron spectroscopy
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Summary:CHF 3 /Ar plasma was used to etch LiTaO 3 crystal by inductively coupled plasmas technique. X-ray photoelectron spectroscopy was performed to investigate the etching mechanism. It was found that chemical reactions had occurred between the F plasma and the Li and Ta metal species, forming the corresponding fluorides. Some fluorides are nonvolatile, and remained on the surface during the etching period. In order to get higher etching rate, it is important to remove these metal fluorides. The combination of chemical reaction and sputtered etching was performed and could effectively remove the remaining residues.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2021.1951032