Ferroelectric properties of vanadium substituted four-layer Aurivillius compound Bi5Fe1.5V0.5Ti2O15 thin films

We report the preparation and characterization of vanadium substituted four-layer Aurivillius compound Bi 5 Fe 1.5 V 0.5 Ti 2 O 15 using spin coating method. Ferroelectricity in the prepared films are confirmed from the well saturated polarization vs electric field (P-E) loops having remnant polariz...

Full description

Saved in:
Bibliographic Details
Published inFerroelectrics Vol. 618; no. 2; pp. 512 - 517
Main Authors Prajapat, Deepak, Surampalli, Akash, Upadhyay, Sanjay Kumar, Reddy, V. Raghavendra
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 25.01.2024
Taylor & Francis Ltd
Subjects
Aurivillius compounds
Bi5FeTi3O15
Bismuth
Defects
Dipoles
domain-pinning
Electric fields
Ferroelectric materials
Ferroelectricity
Low temperature
Polarization
Room temperature
Spin coating
Substitutes
Thin films
Vanadium
Vanadium compounds
Online AccessGet full text

Cover

More Information
Summary:We report the preparation and characterization of vanadium substituted four-layer Aurivillius compound Bi 5 Fe 1.5 V 0.5 Ti 2 O 15 using spin coating method. Ferroelectricity in the prepared films are confirmed from the well saturated polarization vs electric field (P-E) loops having remnant polarization (2 P r ) around 12.94 µC/cm 2 at room temperature. In addition, low temperature P-E measurements show a decrease in P max and 2 P r , which is attributed to the stabilization of defect dipole complexes and domain pinning, as seen in bismuth-based ferroelectrics. Additionally, this decrease in polarization is accompanied by an increase in imprint, confirming the presence of defect dipoles manifested as internal fields.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2023.2273727