Conductivity and photoresistance of the film heterostructure Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3 on the MgO substrate

The results of the study of high conducting areas at the interface between ferroelectric and insulating oxides Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 /Ba 0.8 Sr 0.2 TiO 3 on the MgO substrate are presented. It is shown that the electrical resistance of the heterostructure decreases significantly with cooling...

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Bibliographic Details
Published inFerroelectrics Vol. 605; no. 1; pp. 15 - 20
Main Authors Chibirev, A. O., Leontyev, A. V., Salikhov, T. M., Bannikov, M. I., Mamin, R. F.
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 12.03.2023
Taylor & Francis Ltd
Subjects
Conductivity
Electrical resistance
ferroelectric film
Ferroelectricity
Heterostructures
Infrared lasers
Lanthanum compounds
Low temperature
Magnesium oxide
photoresistance
Substrates
Time constant
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Summary:The results of the study of high conducting areas at the interface between ferroelectric and insulating oxides Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 /Ba 0.8 Sr 0.2 TiO 3 on the MgO substrate are presented. It is shown that the electrical resistance of the heterostructure decreases significantly with cooling and exhibits metallic behavior at low temperatures. Green (514 nm) and infrared (1028 nm) laser illumination of Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 /Ba 0.8 Sr 0.2 TiO 3 heterostructure leads to a decrease in the electrical resistance. The time constant of the negative photoresistance effect is ∼30 ÷ 50 s.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2023.2169004