Effect of varying the gate voltage scan rate in a MoS2/ferroelectric polymer field effect transistor

A ferroelectric FET using MoS 2 and PVDF-TrFE was fabricated, and the effects of varying the gate voltage scan rate from 200 mV/s to 4 mV/s investigated. Charge mobility, sub-threshold voltage swing and the memory window width depended on the scan rate. Prior to switching on, a negative trans-conduc...

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Bibliographic Details
Published inFerroelectrics Vol. 550; no. 1; pp. 1 - 11
Main Authors Pinto, Nicholas J., Rijos, Luis M., Zhao, Meng-Qiang, Parkin, William M., Johnson, A.T. Charlie
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 03.10.2019
Taylor & Francis Ltd
Subjects
Conductance
Electrons
FE-FET
Ferroelectric domains
Ferroelectric materials
Ferroelectricity
Field effect transistors
gate scan
Molybdenum disulfide
MoS2
Nucleation
Polymers
PVDF-TrFE
Resistance
Semiconductor devices
Threshold voltage
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Summary:A ferroelectric FET using MoS 2 and PVDF-TrFE was fabricated, and the effects of varying the gate voltage scan rate from 200 mV/s to 4 mV/s investigated. Charge mobility, sub-threshold voltage swing and the memory window width depended on the scan rate. Prior to switching on, a negative trans-conductance was observed for all scan rates, followed by a rapid increase in the channel current to the on state. A model based on nucleation of ferroelectric domains and unrestricted domain growth was used to explain these results. By lowering the scan rate, the performance of polymer based FE-FET's can be improved.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2019.1652493