Effect of Ni doping on the electro-optic property in K(Ta0.6Nb0.4)O3 films

The rising of thin-film-based plasmonic electro-optic (EO) devices triggers considerable exploitation of ferroelectric oxide thin films with large EO response. In this study, epitaxial (001)-orientated Ni-doped K(Ta0.6Nb0.4)O3 (KTN) films were fabricated on SrRuO3/SrTiO3 substrates via pulsed laser...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 61; no. SN; p. SN1005
Main Authors Yuan, Xueyou, Sakurai, Yuji, Kondo, Shinya, Yoshino, Masahito, Nagasaki, Takanori, Yamada, Tomoaki
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.11.2022
Japanese Journal of Applied Physics
Subjects
Coefficient of variation
Doping
Electric fields
electro-optic
ferroelectric
Ferroelectricity
pockels effect
Pulsed laser deposition
Pulsed lasers
Refractivity
Substrates
Thin films
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Summary:The rising of thin-film-based plasmonic electro-optic (EO) devices triggers considerable exploitation of ferroelectric oxide thin films with large EO response. In this study, epitaxial (001)-orientated Ni-doped K(Ta0.6Nb0.4)O3 (KTN) films were fabricated on SrRuO3/SrTiO3 substrates via pulsed laser deposition. In comparison with a pure KTN film, a larger withstand electric field was achieved by Ni doping. The EO measurements revealed that the doping of Ni ions induced a decrease in the effective EO coefficient. Instead, the variation of refractive index by the applicable maximum electric field was increased due to the increment of withstand electric field, particularly for the case of 2% Ni dopant.
Bibliography:JJAP-S1102897.R1
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac7ea9