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Self-powered Schottky barrier photodetector with high responsivity based on homoepitaxial Ga2O3 films by MOCVD

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Bibliographic Details
Published inSemiconductor science and technology Vol. 39; no. 10
Main Authors Yu, Han, Jiao, Teng, Dang, Xinming, Han, Yu, Li, Yihan, Li, Zhen, Chen, Peiran, Dong, Xin, Li, Guoxing, Zhang, Yuantao, Zhang, Baolin
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.10.2024
Subjects
homoepitaxy
MOCVD
photodetector
self-powered
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Bibliography:SST-110331.R3
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ad763a
  • ikona citování Cite this
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