Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors

In this paper, we investigated the effects of the post-deposition annealing (PDA) on the threshold voltage (Vth) of AlGaN/GaN MOS heterojunction field-effect transistors with atomic-layer-deposited Al2O3 using H2O vapor or oxygen plasma as the oxidant. By PDA, the Vth shifts positively with the Vth...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 58; no. 3; pp. 030902 - 30905
Main Authors Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.03.2019
Japanese Journal of Applied Physics
Subjects
Aluminum gallium nitrides
Aluminum oxide
Annealing
Charge density
Deposition
Electrical measurement
Field effect transistors
Heterojunctions
Oxidizing agents
Oxygen plasma
Semiconductor devices
Threshold voltage
Transistors
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Summary:In this paper, we investigated the effects of the post-deposition annealing (PDA) on the threshold voltage (Vth) of AlGaN/GaN MOS heterojunction field-effect transistors with atomic-layer-deposited Al2O3 using H2O vapor or oxygen plasma as the oxidant. By PDA, the Vth shifts positively with the Vth variations depending on the oxidants. The capacitance-voltage measurements reveal that the Vth variation is attributed to the differences in the initial fixed charge density in the Al2O3 or/and the Al2O3/AlGaN for both oxidants.
Bibliography:JJAP-100105
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/aafd17