Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements

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Bibliographic Details
Published inSemiconductor science and technology Vol. 23; p. 095008
Main Authors Lisesivdin, S B, Demirezen, S, Caliskan, M D, Yildiz, A, Kasap, M, Ozcelik, S, Ozbay, E
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2008
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/23/9/095008