Lasing in optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures on silicon

We report lasing of optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures grown lattice-matched on Si. Modal gain of up to 80 cm -1 is determined at 300 K and a distinct threshold behaviour and mode spectrum is observed up to 100 K.

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Bibliographic Details
Published in2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference pp. 1 - 2
Main Authors Lange, C., Koster, N.S., Franzbach, D.J., Chatterjee, S., Ruhle, W.W., Zinnkann, S., Liebich, S., Nemeth, I., Fritz, R., Volz, K., Stolz, W., Kunert, B., Gerhardt, N.C., Koukourakis, N., Hofmann, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
(140.5960) semiconductor lasers
(300.6470) semiconductor spectroscopy
Laser excitation
Lattices
Optical films
Optical materials
Optical pulses
Optical pumping
Photonic band gap
Pulse amplifiers
Silicon
Temperature
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Summary:We report lasing of optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures grown lattice-matched on Si. Modal gain of up to 80 cm -1 is determined at 300 K and a distinct threshold behaviour and mode spectrum is observed up to 100 K.
ISSN:2160-9004
DOI:10.1364/CLEO.2009.CTuY2