The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes

Novel approach to improve light extraction efficiency of InGaN-based light emitting diodes with polydimethylsiloxane concave microstructures arrays was demonstrated, which leads to enhancement of extraction efficiency by 1.60-times in good agreement with simulation.

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Bibliographic Details
Published in2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference pp. 1 - 2
Main Authors Yik-Khoon Ee, Kumnorkaew, P., Arif, R.A., Hua Tong, Gilchrist, J.F., Tansu, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
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Summary:Novel approach to improve light extraction efficiency of InGaN-based light emitting diodes with polydimethylsiloxane concave microstructures arrays was demonstrated, which leads to enhancement of extraction efficiency by 1.60-times in good agreement with simulation.
ISSN:2160-9004
DOI:10.1364/cleo.2009.cmoo6