Critical coupling to surface phonon-polaritons in SiC

We observe critically coupled surface phonon-polariton excitation in SiC, leading to maximum electric field enhancement. A double-scan of wavelength and incidence angle in the ATR configuration demonstrates critical coupling for two air gaps.

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Bibliographic Details
Published in2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference pp. 1 - 2
Main Authors Neuner, B., Korobkin, D., Fietz, C., Carole, D., Ferro, G., Shvets, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
(240.5420) Polaritons
(240.6690) Surface waves
Air gaps
Frequency
Laser excitation
Laser theory
Optical coupling
Optical reflection
Optical surface waves
Reflectivity
Silicon carbide
Surface waves
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Summary:We observe critically coupled surface phonon-polariton excitation in SiC, leading to maximum electric field enhancement. A double-scan of wavelength and incidence angle in the ATR configuration demonstrates critical coupling for two air gaps.
ISSN:2160-9004
DOI:10.1364/IQEC.2009.IMB2