Low temperature atomic layer deposited HfO2 film for high performance charge trapping flash memory application

• Published in: Semiconductor science and technology Vol. 29; no. 4
• Main Authors: Chen, Guoxing, Huo, Zongliang, Jin, Lei, Zhang, Dong, Zhao, Shengjie, Han, Yulong, Liu, Su, Liu, Ming
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.04.2014
• Subjects: atomic layer deposition (ALD); charge trapping memory; HfO
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/0268-1242/29/4/045019

The impact of key process parameters on the electrical characteristics of atomic layer deposited HfO2 films has been systematically studied with MHOS devices via capacitance-voltage (C-V) measurement. C-V hysteresis curves revealed that charge storage capacity is significantly enhanced with decreasing substrate temperature from 350 down to 150 °C and or increasing purge time of the inert gas. The developed HfO2 trapping layer was also demonstrated by a MAHOS memory device. Improved memory window, fast program speed and good retention characteristics have been obtained. The study provides a reference for memory performance improvement of HfO2-based charge trap flash memory.