New process technologies improve IGBT module efficiency

New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC in...

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Bibliographic Details
Published inConference record of the Industry Applications Conference Vol. 2; pp. 991 - 996 vol.2
Main Authors Motto, E.R., Donlon, J.F., Mori, S., Iida, T.
Format Conference Proceeding Journal Article
LanguageEnglish
Published United States IEEE 01.01.1995
Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ (United States)
Subjects
ADVANCED PROPULSION SYSTEMS
Batteries
Bridge circuits
Charge carrier density
ELECTRIC CONTROLLERS
ELECTRIC-POWERED VEHICLES
ENERGY EFFICIENCY
Insulated gate bipolar transistors
INVERTERS
Packaging
POWER SUPPLIES
Semiconductor diodes
Semiconductor optical amplifiers
Short circuit currents
Voltage
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Summary:New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250 V IGBT has been developed using a trench gate structure. This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.
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ObjectType-Conference Paper-1
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CONF-9510203-
ISBN:0780330080
9780780330085
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.1995.530409