New process technologies improve IGBT module efficiency
New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC in...
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Published in | Conference record of the Industry Applications Conference Vol. 2; pp. 991 - 996 vol.2 |
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Main Authors | , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
United States
IEEE
01.01.1995
Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ (United States) |
Subjects | |
Online Access | Get full text |
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Summary: | New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250 V IGBT has been developed using a trench gate structure. This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters. |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 CONF-9510203- |
ISBN: | 0780330080 9780780330085 |
ISSN: | 0197-2618 2576-702X |
DOI: | 10.1109/IAS.1995.530409 |