Characteristics of β-SIC films grown from an SiHC13-C3H8-H2 system

• Published in: Electronics & communications in Japan. Part 2, Electronics Vol. 70; no. 5; pp. 53 - 63
• Main Authors: Furumura, Yuji, Doki, Masahiko, Mieno, Fumitake, Maeda, Mamoru
• Format: Journal Article
• Language: English
• Published: New York Wiley Subscription Services, Inc., A Wiley Company 1987
• ISSN: 8756-663X; 1520-6432
• DOI: 10.1002/ecjb.4420700507

Beta‐phase silicon carbine (β‐SiC) layers have been grown on silicon substrates at a growth temperature of 1000°C and at a low pressure of 200 Pa from an SiHC13‐C3H8‐H2 system. Silicon substrates are 4‐inch silicon wafers, and (111) tilted substrates with 4° off‐axis and (100) substrates with no off‐axis are both used. It was found from X‐ray diffraction and reflection high‐energy electron diffraction (RHEED) analysis that β‐SiC single‐crystal films are obtained on (111) tilted substrates, but not on (100) substrates under the conditions used in this experiment. By forming an n‐p heterojunction between a P‐doped β‐SiC layer and a p‐type substrate and measuring its rectifying characteristics, the saturation current density at 2 V in the reverse‐biased region was found to be below 2 × 10−6 A/cm2.