Large-area few-layer MoS2 deposited by sputtering

• Published in: Materials research express Vol. 3; no. 6
• Main Authors: Huang, Jyun-Hong, Chen, Hsing-Hung, Liu, Pang-Shiuan, Lu, Li-Syuan, Wu, Chien-Ting, Chou, Cheng-Tung, Lee, Yao-Jen, Li, Lain-Jong, Chang, Wen-Hao, Hou, Tuo-Hung
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2016
• Subjects: MoS; sputter; transition metal dichalcogenide
• ISSN: 2053-1591
• DOI: 10.1088/2053-1591/3/6/065007

Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1-1 m with a trap charge density in grain boundaries of the order of 1013 cm-2.