The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact

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Bibliographic Details
Published inChinese physics B Vol. 18; p. 1614
Main Authors Fang, Liu, Tao, Wang, Bo, Shen, Sen, Huang, Fang, Lin, Nan, Ma, Fu-Jun, Xu, Peng, Wang, Jian-Quan, Yao
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2009
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/18/4/054