Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium
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Published in | Chinese physics (Beijing, China) Vol. 16; p. 245 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.01.2007
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Online Access | Get full text |
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ISSN: | 1009-1963 |
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DOI: | 10.1088/1009-1963/16/1/042 |