Improving the voltage of GaAs solar cells with In0.4Ga0.6As nanostructures

The fundamental reason for the decrease in solar cell (SC) voltage when introducing nanostructures has been found. It consists in the fact that recombination redistributes between nanostructures and bulk GaAs. It has been shown that, by changing the position of the nanostructure medium in p-i-n GaAs...

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Published inApplied physics express Vol. 13; no. 7
Main Authors Mintairov, Mikhail A., Evstropov, Valery V., Mintairov, Sergei A., Nadtochiy, Alexey M., Nahimovich, Maria V., Salii, Roman A., Shvarts, Maxim Z., Kalyuzhnyy, Nikolay A.
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.07.2020
Subjects
efficiency
internal quantum yield
nanostructures
solar cells
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Summary:The fundamental reason for the decrease in solar cell (SC) voltage when introducing nanostructures has been found. It consists in the fact that recombination redistributes between nanostructures and bulk GaAs. It has been shown that, by changing the position of the nanostructure medium in p-i-n GaAs SCs, it is possible to partially suppress recombination and improve voltage while maintaining the increase in short-circuit current. The decrease of recombination via nanostructures provides an increase in SC efficiency from 19.87% to 21.94%.
Bibliography:APEX-103760.R2
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ab9318