Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties

We have successfully grown a polycrystalline orthorhombic BaSi2 film on a Ge(100) substrate by an evaporation method. Deposition of an amorphous Si (a-Si) film on the Ge substrate prior to BaSi2 evaporation plays a critical role in obtaining a high-quality BaSi2 film. By controlling substrate temper...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 56; no. 5S1
Main Authors Trinh, Cham Thi, Nakagawa, Yoshihiko, Hara, Kosuke O., Kurokawa, Yasuyoshi, Takabe, Ryota, Suemasu, Takashi, Usami, Noritaka
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.05.2017
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Summary:We have successfully grown a polycrystalline orthorhombic BaSi2 film on a Ge(100) substrate by an evaporation method. Deposition of an amorphous Si (a-Si) film on the Ge substrate prior to BaSi2 evaporation plays a critical role in obtaining a high-quality BaSi2 film. By controlling substrate temperature and the thickness of the a-Si film, a crack-free and single-phase polycrystalline orthorhombic BaSi2 film with a long carrier lifetime of 1.5 µs was obtained on Ge substrates. The photoresponse property of the ITO/BaSi2/Ge/Al structure was clearly observed, and photoresponsivity was found to increase with increasing substrate temperature during deposition of a-Si. Furthermore, the BaSi2 film grown on Ge showed a higher photoresponsivity than that grown on Si, indicating the potential application of evaporated BaSi2 on Ge to thin-film solar cells.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.56.05DB06