Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions

The band-to-band (BTB) tunneling current J through in-plane MoS2/WS2 heterojunctions is calculated by the nonequilibrium Green function method combined with tight-binding approximation. Types A and B of band configurations are considered. For type-A (type-B) heterojunctions, a potential notch exists...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 4S
Main Authors Kuroda, Tatsuya, Mori, Nobuya
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2018
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Summary:The band-to-band (BTB) tunneling current J through in-plane MoS2/WS2 heterojunctions is calculated by the nonequilibrium Green function method combined with tight-binding approximation. Types A and B of band configurations are considered. For type-A (type-B) heterojunctions, a potential notch exists (or is absent) at the heterointerface. Both type-A and type-B MoS2/WS2 heterojunctions can support a higher BTB current than MoS2 and WS2 homojunctions. For type-A heterojunctions, the resonant enhancement of J occurs resulting in a significantly higher BTB tunneling current.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.04FP03