First-principles modeling of defect-free abrupt SiC/SiO2 interfaces on a- and m-face 4H-SiC

While the a- and m-faces of 4H-SiC have attracted increasing interest for SiC metal-oxide-semiconductor device applications, the electronic and/or geometric structures of their SiC/SiO2 interfaces are still unknown. We constructed model structures of "defect-free abrupt SiC/SiO2 interfaces. Eve...

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Bibliographic Details
Published inApplied physics express Vol. 11; no. 10
Main Authors Kaneko, Tomoaki, Tajima, Nobuo, Yamasaki, Takahiro, Nara, Jun, Schimizu, Tatsuo, Kato, Koichi, Ohno, Takahisa
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.10.2018
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Summary:While the a- and m-faces of 4H-SiC have attracted increasing interest for SiC metal-oxide-semiconductor device applications, the electronic and/or geometric structures of their SiC/SiO2 interfaces are still unknown. We constructed model structures of "defect-free abrupt SiC/SiO2 interfaces. Even with C-O bonds at the interface and/or an uneven interfacial boundary, their electronic properties show only slight difference from those of the Si-face with a flat interface and no-interface C-O bonds. Our results offer a starting point for studying whether the smaller number of defects for a- and m-faces compared with the Si-face is related to the intrinsic properties of the interface or to oxidation processes.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.11.101304