Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit couplings

• Published in: Journal of physics. Condensed matter Vol. 30; no. 14
• Main Authors: Lu, Mao-Wang, Chen, Sai-Yan, Zhang, Gui-Lian, Huang, Xin-Hong
• Format: Journal Article
• Language: English
• Published: IOP Publishing 13.03.2018
• Subjects: Goos-Hanchen effect; lateral displacement; semiconductor nanostructure; spatial spin splitter

We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-pola...