Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit couplings

We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-pola...

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 30; no. 14
Main Authors Lu, Mao-Wang, Chen, Sai-Yan, Zhang, Gui-Lian, Huang, Xin-Hong
Format Journal Article
LanguageEnglish
Published IOP Publishing 13.03.2018
Subjects
Goos-Hanchen effect
lateral displacement
semiconductor nanostructure
spatial spin splitter
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Summary:We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.
Bibliography:JPCM-110561.R2
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/aab0b2