Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit couplings
We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-pola...
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| Published in | Journal of physics. Condensed matter Vol. 30; no. 14 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
13.03.2018
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0953-8984 1361-648X |
| DOI | 10.1088/1361-648X/aab0b2 |
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| Abstract | We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications. |
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| AbstractList | We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications. |
| Author | Chen, Sai-Yan Zhang, Gui-Lian Lu, Mao-Wang Huang, Xin-Hong |
| Author_xml | – sequence: 1 givenname: Mao-Wang orcidid: 0000-0001-5836-9685 surname: Lu fullname: Lu, Mao-Wang email: maowanglu@126.com organization: Guilin University of Technology College of Science, Guilin 541004, People's Republic of China – sequence: 2 givenname: Sai-Yan surname: Chen fullname: Chen, Sai-Yan organization: Guilin University of Technology College of Science, Guilin 541004, People's Republic of China – sequence: 3 givenname: Gui-Lian surname: Zhang fullname: Zhang, Gui-Lian organization: Guilin University of Technology College of Science, Guilin 541004, People's Republic of China – sequence: 4 givenname: Xin-Hong surname: Huang fullname: Huang, Xin-Hong organization: Guilin University of Technology College of Science, Guilin 541004, People's Republic of China |
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| Copyright | 2018 IOP Publishing Ltd |
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| DOI | 10.1088/1361-648X/aab0b2 |
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| DocumentTitleAlternate | Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit couplings |
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| Snippet | We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined... |
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| SubjectTerms | Goos-Hanchen effect lateral displacement semiconductor nanostructure spatial spin splitter |
| Title | Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/AlxGa1−xAs nanostructure modulated by spin-orbit couplings |
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