Investigation of mm-wave RTD based amplifiers
This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurement...
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Published in | 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) pp. 1 - 2 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.09.2016
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Abstract | This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurements are used to represent devices in simulation software for increased fidelity. Initial results are promising, showing close to 10 dB gain at 30 GHz. |
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AbstractList | This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurements are used to represent devices in simulation software for increased fidelity. Initial results are promising, showing close to 10 dB gain at 30 GHz. |
Author | Steenson, D. P. Muttlak, S. Doychinov, V. Sexton, J. Missous, M. |
Author_xml | – sequence: 1 givenname: V. surname: Doychinov fullname: Doychinov, V. organization: Inst. of Microwaves & Photonics, Univ. of Leeds, Leeds, UK – sequence: 2 givenname: D. P. surname: Steenson fullname: Steenson, D. P. organization: Inst. of Microwaves & Photonics, Univ. of Leeds, Leeds, UK – sequence: 3 givenname: S. surname: Muttlak fullname: Muttlak, S. organization: Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK – sequence: 4 givenname: J. surname: Sexton fullname: Sexton, J. organization: Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK – sequence: 5 givenname: M. surname: Missous fullname: Missous, M. organization: Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK |
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Snippet | This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz,... |
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SubjectTerms | Gain Performance evaluation Power transmission lines Resonant tunneling devices Scattering parameters Transmission line measurements Voltage measurement |
Title | Investigation of mm-wave RTD based amplifiers |
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