Investigation of mm-wave RTD based amplifiers

This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurement...

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Bibliographic Details
Published in2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) pp. 1 - 2
Main Authors Doychinov, V., Steenson, D. P., Muttlak, S., Sexton, J., Missous, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2016
Subjects
Gain
Performance evaluation
Power transmission lines
Resonant tunneling devices
Scattering parameters
Transmission line measurements
Voltage measurement
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Summary:This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurements are used to represent devices in simulation software for increased fidelity. Initial results are promising, showing close to 10 dB gain at 30 GHz.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz.2016.7758969