Investigation of mm-wave RTD based amplifiers
This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurement...
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Published in | 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) pp. 1 - 2 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.09.2016
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Subjects | |
Online Access | Get full text |
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Summary: | This work explores the applicability of Resonant Tunnelling Diodes as active elements in two different amplifier configurations in the range 25 GHz-35 GHz, with a view of implementing scaled versions at W-band and beyond, as frontend narrow-band low-noise amplifiers. On-wafer S-parameter measurements are used to represent devices in simulation software for increased fidelity. Initial results are promising, showing close to 10 dB gain at 30 GHz. |
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ISSN: | 2162-2035 |
DOI: | 10.1109/IRMMW-THz.2016.7758969 |