Low-damage photolithography for magnetically doped (Bi,Sb)2Te3 quantum anomalous Hall thin films

We have developed a low-damage photolithography method for magnetically doped(Bi,Sb)2Te3 quantum anoma-lous Hall(QAH)thin films incorporating an additional resist layer of poly(methyl methacrylate)(PMMA).By performing control experiments on the transport properties of five devices at varied gate vol...

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Bibliographic Details
Published inChinese physics B Vol. 32; no. 11; pp. 289 - 295
Main Authors Gao, Zhiting, Guo, Minghua, Lian, Zichen, Li, Yaoxin, Bai, Yunhe, Feng, Xiao, He, Ke, Wang, Yayu, Liu, Chang, Zhang, Jinsong
Format Journal Article
LanguageEnglish
Published Chinese Physical Society and IOP Publishing Ltd 01.11.2023
Subjects
fabrication techniques
quantum anomalous Hall effect
topological insulator
topological insulator
quantum anomalous Hall effect
fabrication techniques
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Summary:We have developed a low-damage photolithography method for magnetically doped(Bi,Sb)2Te3 quantum anoma-lous Hall(QAH)thin films incorporating an additional resist layer of poly(methyl methacrylate)(PMMA).By performing control experiments on the transport properties of five devices at varied gate voltages(Vgs),we revealed that the modified photolithography method enables fabricating QAH devices with the transport and magnetic properties unaffected by fabri-cation process.Our experiment represents a step towards the production of novel micro-structured electronic devices based on the dissipationless QAH chiral edge states.
ISSN:1674-1056
DOI:10.1088/1674-1056/ad0147